s10140/s10141 series is a family of back-thinned fft-ccd image sensors specifically designed for low-light-level detection in s cientific applications. by using the binning operation, s10140/s0141 series can be used as a linear image sensor having a long aperture i n the direction of the device length. this makes s10140/s10141 series ideally suited for use in spectrophotometry. the binning operation offers si gnificant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an ex ternal circuit. s10140/s10141 series also features low noise and low dark signal (mpp mode operation). this enables low-light-level detection a nd long integration time, thus achieving a wide dynamic range. s10140/s10141 series has an effective pixel size of 12 12 m and is available in image areas ranging from 12.288 (h) 1.464 (v) mm 2 (1024 122 pixels) up to a large image area of 24.576 (h) 6.072 (v) mm 2 (2048 506 pixels). features l low readout noise: 4 e - rms typ. l high resolution: pixel size 12 12 m l non-cooled type: s10140 series one-stage te-cooled type: s10141 series l line, pixel binning, area scanning l greater than 90 % quantum efficiency at peak sensitivity wavelength l wide spectral response range l wide dynamic range l mpp operation l high uv sensitivity with good stability l same pin connections as s7030/s7031 series applications l fluorescence spectrometer, icp l industrial inspection requiring l semiconductor inspection l dna sequencer l low-light-level detection image sensor ccd area image sensor low readout noise, high resolution (pixel size: 12 m) s10140/s10141 series selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] suitable multichannel detector head s10140-1007 1044 128 1024 122 12.288 1.464 s10140-1008 1044 256 1024 250 12.288 3.000 s10140-1009 1044 512 1024 506 12.288 6.072 s10140-1107 2068 128 2048 122 24.576 1.464 s10140-1108 2068 256 2048 250 24.576 3.000 s10140-1109 non-cooled 2068 512 2048 506 24.576 6.072 c10150 s10141-1007s 1044 128 1024 122 12.288 1.464 s10141-1008s 1044 256 1024 250 12.288 3.000 s10141-1009s 1044 512 1024 506 12.288 6.072 s10141-1107s 2068 128 2048 122 24.576 1.464 s10141-1108s 2068 256 2048 250 24.576 3.000 S10141-1109S one-stage te-cooled 2068 512 2048 506 24.576 6.072 c10151 general ratings parameter s10140 series s10141 series pixel size 12 (h) 12 (v) m vertical clock phase 2 phases horizontal clock phase 2 phases output circuit one-stage mosfet source follower package 24 pin ceramic dip (refer to dimensional outlines) window * 1 quartz glass ar-coated sapphire *1: window-less is available upon request. 1
ccd area image sensor s10140/s10141 series absolute maximum ratings (ta=25 c) ? parameter symbol min. typ. max. unit operating temperature topr -50 - +30 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +30 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v ish voltage v ish -0.5 - +18 v igv voltage v ig1v , v ig2v -10 - +15 v igh voltage v ig1h , v ig2h -10 - +15 v sg voltage v sg -10 - +15 v og voltage v og -10 - +15 v rg voltage v rg -10 - +15 v tg voltage v tg -10 - +15 v vertical clock voltage v p1v , v p2v -10 - +15 v horizontal clock voltage v p1h , v p2h -10 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od - 24 - v reset drain voltage v rd - 12 - v output gate voltage v og - 3 - v substrate voltage v ss - 0 - v test point (vertical input source) v isv - v rd - v test point (horizontal input source) v ish - v rd - v test point (vertical input gate) v ig1v , v ig2v -9 -8 0 v test point (horizontal input gate) v ig1h , v ig2h -9 -8 0 v high v p1vh , v p2vh - 3 - vertical shift register clock voltage low v p1vl , v p2vl - -8 - v high v p1hh , v p2hh - 5 - horizontal shift register clock voltage low v p1hl , v p2hl - -8 - v high v sgh - 5 - summing gate voltage low v sgl - -8 - v high v rgh - 5 - reset gate voltage low v rgl - -8 - v high v tgh - 3 - transfer gate voltage low v tgl - -8 - v electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit signal output frequency fc - 250 500 khz vertical shift register capacitance * 2 c p1v , c p2v - 3600 - pf horizontal shift register capacitance * 2 c p1h , c p2h - 150 - pf summing gate capacitance c sg - 30 - pf reset gate capacitance c rg - 30 - pf transfer gate capacitance c tg - 75 - pf charge transfer efficiency * 3 cte 0.99995 0.99999 - - dc output level * 4 vout 12 17 18 v output impedance * 4 zo - 8 - k ? power consumption * 4 * 5 p - 4 - mw *2: s10140-1108, s10141-1108s *3: charge transfer efficiency per pixel, measured at half of the full well capacity. *4: the values depend on the load resistance. (typical, vod=24 v, load resistance=100 k ? ) *5: power consumption of the on-chip amplifier 2
ccd area image sensor s10140/s10141 series 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 1100 1200 20 30 40 50 60 70 80 90 100 (typ. ta=25 ?c) quartz window ar coated sapphire quantum efficiency (%) wavelength (nm) (typ. ta=25 ? c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated back-thinned s10140/s10141 series front-illuminated (uv coat) window material type no. window material s10140 series quartz glass * 11 (option: window-less) s10141 series ar-coated sapphire * 12 (option: window-less) s10142 series (two-stage te-cooled types, made to order) ar-coated sapphire * 12 (option: window-less) *11: resin sealing *12: hermetic sealing *10: spectral response with quartz glass or ar-coated sapphire are decreased by the transmittance. spectral response (without window) *10 spectral transmittance characteristics kmpdb0254ea kmpdb0110ea dark current vs. temperature 3 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 60 75 - horizontal 120 150 - full well capacity summing fw 150 200 - ke - ccd node sensitivity sv 4 5 6 v/e - 25 c - 100 1000 dark current * 6 mpp mode 0 c ds - 5 50 e - /pixel/ s readout noise * 7 nr - 4 18 e - rms line binning 30000 37500 - - dynamic range * 8 area scanning dr 15000 18500 - - photo response non-uniformity * 9 prnu - 3 10 % spectral response range - 200 to 1100 - nm w hite spots - - 0 - point defect * 10 black spots - - 10 - cluster defect * 11 --3- blemish column defect * 12 - --0- *6: dark current nearly doubles for every 5 to 7 c increase in temperature. *7: -50 c, operating frequency is 20 khz. *8: dynamic range (dr) = full well/readout noise *9: measured at the half of the full well capacity output. *10: w hite spots pixels whose dark current is higher than 1 ke - after one-second integration at 0 c. black spots pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more conti g uous defective p ixels fixed pattern noise (peak to peak) signal 100 photo response non-uniformity (prnu) [%] -50 -40 -30 -20 0 -10 10 20 30 temperature ( ? c) 0.01 0.1 1 10 100 1000 dark current (e - /pixel/s) (typ.) kmpdb0255ea
ccd area image sensor s10140/s10141 series device structure (conceptual drawing of top view) 23 22 21 2 0 14 15 24 1 2 12 11 89 3 4 5 2 bevel signal out 2 n 4 blank 4 blank v=122, 250, 506 h=1024, 2048 4 bevel thinning thinning 1 23 45 2 3 4 5 v h 6 bevel 6 bevel 2 n signal out 13 10 kmpdc0244ea integration period (shutter must be open) vertical binning period (shutter must be closed) p1v p2v, tg p1h p2h, sg readout period (shutter must be closed) 3.. 62 3..126 3..254 63 127 255 64 128 256 58 + 6 (bevel): s1014 * -1007/-1107 122 + 6 (bevel): s1014 * -1008/-1108 250 + 6 (bevel): s1014 * -1009/-1109 tpwv to v r tpwh, tpws tpwr 123 531 1043 532 1044 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 4..530 4..1042 12 d19 d2 d1 d20 d3..d10, s1..s1024, d11..d18 rg os s1..s512 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 timing chart kmpdc0242ea parameter symbol remark min. typ. max. unit pulse width tpwv 6 8 - s p1v, p2v, tg rise and fall time tprv, tpfv * 13 20 - - ns pulse width tpwh 1000 2000 - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 13 40 50 60 % pulse width tpws 1000 2000 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - 40 50 60 % pulse width tpwr 100 1000 - ns rg rise and fall time tprr, tpfr - 5 - - ns tg ? p1h overlap time tovr - 1 2 - s *13: the clock pulses should be overlapped at 50 % of clock pulse amplitude. line bininng 4
ccd area image sensor s10140/s10141 series integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s1024, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 s1..s512 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 4.. 63 4..127 4..255 64 58 + 6 (bevel): s1014 * -1007/-1107 128 122 + 6 (bevel): s1014 * -1008/-1108 256 250 + 6 (bevel): s1014 * -1009/-1109 kmpdc0243ea parameter symbol remark min. typ. max. unit pulse width tpwv 6 8 - s p1v, p2v, tg rise and fall time tprv, tpfv * 14 20 - - ns pulse width tpwh 1000 2000 - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 14 40 50 60 % pulse width tpws 1000 2000 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - 40 50 60 % pulse width tpwr 100 1000 - ns rg rise and fall time tprr, tpfr - 5 - - ns tg - p1h overlap time tovr - 1 2 - s *14: the clock pulses should be overlapped at 50 % of clock pulse amplitude. area scanning 5
ccd area image sensor s10140/s10141 series (24 ) 0.5 7.3 1.0 3.0 6.7 4.8 photosensitive surface 7.7 1st pin indication pad a 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.58 8.2 s10141-1107s: a=1.464 s10141-1108s: a=3.000 S10141-1109S: a=6.072 te-cooler window 16.3 8.2 34.0 50.0 2.54 22.9 19.0 4.0 42.0 22.4 a 7.3 1.0 7.7 6.7 4.8 active area 12.29 photosensitive surface 1st pin indication pad 3.0 te-cooler s10141-1007s: a=1.464 s10141-1008s: a=3.000 s10141-1009s: a=6.072 (24 ) 0.5 4.4 4.8 2.4 3.8 photosensitive surface 1st pin indication pad 3.0 (24 ) 0.5 window 16.3 8.2 34.0 2.54 22.9 22.4 a active area 12.29 s10140-1007: a=1.464 s10140-1008: a=3.000 s10140-1009: a=6.072 dimensional outlines (unit: mm) s10140-1007/-1008/-1009 s10140-1107/-1108/-1109 kmpda0207ea kmpda0208ea s10141-1007s/-1008s/-1009s s10141-1107s/-1108s/-1109s kmpda0209eb kmpda0210eb 3.0 photosensitive surface 4.4 2.4 4.8 3.8 window 28.6 22.9 22.4 active area 24.58 a 8.2 44.0 2.54 1st pin indication pad s10140-1107: a=1.464 s10140-1108: a=3.000 s10140-1109: a=6.072 (24 ) 0.5 6
ccd area image sensor s10140/s10141 series pin connections s10140 series s10141 series pin no. symbol function symbol function remark (standard operation) 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =100 k ? 3 od output transistor drain od output transistor drain +24 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same pulse as p2h 6 - - 7 - - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) 12 ish test point (horizontal input source) ish test point (horizontal input source) connect to rd 13 tg * 15 transfer gate tg * 15 transfer gate same pulse as p2v 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 isv test point (vertical input source) isv test point (vertical input source) connect to rd 22 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) 23 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) 24 rg reset gate rg reset gate *15: isolation gate between vertical register and horizontal register. in standard operation, tg should be applied the same pul se as p2v. specifications of built-in te-cooler (typ.) parameter symbol condition s10141-1007s/-1008s/-1009s s10141-1107s/-1108s/-1109s unit internal resistance rint ta=25 c 2.5 1.2 ? maximum current * 16 imax tc * 17 =th * 18 =25 c 1.5 3.0 a maximum voltage vmax tc * 17 =th * 18 =25 c 3.8 3.6 v maximum heat absorption * 19 qmax 3.4 5.1 w maximum temperature of heat radiating side - 70 70 c *16: maximum current imax: if the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *17: temperature of the cooling side of thermoelectric cooler. *18: temperature of the heat radiating side of thermoelectric cooler. *19: maximum heat absorption qmax. this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0178ea kmpdb0179ea s10141-1007s/-1008s/-1009s s10141-1107s/-1108s/-1109s 7
ccd area image sensor s10140/s10141 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r1 = r2 expb (1 / t1 - 1 / t2) where r1 is the resistance at absolute temperature t1 (k) r2 is the resistance at absolute temperature t2 (k) b is so-called the b constant (k) the characteristics of the thermistor used are as follows. r (298k) = 10 k ? b (298k / 323k) = 3450 k cat. no. kmpd1094e05 oct. 2007 dn precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the ccd to warm back is less than 5 k/minute. kmpdb0111eb 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ? 8
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